Noise, Large-Signal Modeling and Characterization of InP/InGaAs HBTs
نویسنده
چکیده
We developed a robust large-signal model for InP/InGaAs HBTs. DC, small-signal, noise and power characteristics of InP/InGaAs HBTs are measured over a wide range of frequencies and bias conditions. A minimum noise figure (FMIN) of 3.5dB, and a gain of 16.8dB are achieved at 10-GHz. These measurement results are the basis for robust nonlinear models of InP/InGaAs HBT devices.
منابع مشابه
Study of 1/f and 1/f Noise for InP DHBT
This work reports experimental data comparing the low frequency noise spectrum of InP based HBTs. Double heterojunction device structures are examined with and without surface passivation ledges. INTRODUCTION Compound semiconductor InP heterojunction bipolar transistors (HBTs) hold great promise for ultra high-speed analog microwave circuit applications. The low frequency noise characteristics ...
متن کاملPOWER PERFORMANCE OF PNP InAlAs/InGaAs HBTs
Recently, small-signal microwave performance has been reported for PNP InAlAs/InGaAs HBTs [1, 2]. While power performance of PNP AlGaAs/GaAs HBTs has been demonstrated [3], nothing has been reported on power performance of PNP HBTs in the InP material system. In this work, InAlAs/InGaAs PNP HBTs were fabricated and subsequently characterized under large signal conditions at X-band to determine ...
متن کاملPerformance Optimization of PNP InAlAs/InGaAs HBTs
Recently, microwave performance has been reported for PNP InAlAs/InGaAs HBTs [1]. Although some simulations have been performed for the optimization of GaAs-based PNP HBTs [2], little has been reported on the optimization of PNP HBTs in the InP material system. In this work, various layer structures for InAlAs/InGaAs PNP HBTs were simulated using a 2dimensional drift-diffusion simulator in orde...
متن کاملPerformance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP
This paper presents a comprehensive comparison of three state-of-the-art heterojunction bipolar transistors (HBTs); the AlGaAs/GaAs HBT, the Si/SiGe HBT and the InGaAs/InP HBT. Our aim in this paper is to find the potentials and limitations of these devices and analyze them under common Figure of Merit (FOM) definitions as well as to make a meaningful comparison which is necessary for a technol...
متن کاملPerformance of InP/InGaAs Heterojunction Bipolar Transistors For 40Gb/s OEIC Applications
A high performance InP/InGaAs SHBT technology will be presented. InP SHBT is advantageous in terms of low-cost monolithic integration with photodiodes for high-speed optical receiver frontend applications. We will demonstrate that, through optimized CAD geometries, the fabricated HBTs showed uniform and improved device performance. Our best results show that an fT of over 160 GHz and fmax of gr...
متن کامل